description the l g50n10 uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. it can be used in a wide variety of applications. general features high density cell design for ultra low rdson fully characterized avalanche voltage and current good stability and uniformity with high e as excellent package for good heat dissipation special process technology for high esd capability application power switching application led backlighting uninterruptible power supply sche matic diagram mark ing and pin assignment to-252 abso lute maximum ratings (t c =25 unless otherwise noted) parameter symbol limit unit drai n-source voltage v ds 100 v gate -source voltage v gs 20 v drai n current-continuous i d 50 a drai n current-continuous(t c =100 ) i d (100 ) 35 a pulse d drain current i dm 150 a maxi mum power dissipation p d 130 w deba ting factor 0.87 w/ sing le pulse avalanche energy (note 5) e as 450 mj oper ating junction and storage temperature range t j ,t stg -55 to 175 ther mal resistance,junction-to-case (note 2) r jc 1.15 /w ther mal characteristic v dss r ds(o n ) id 15 50a 4.5v @ (typ) ? 100v m r ds(on ) 14 10v @ (typ) ? m ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com revision:20170301 -p1
elec trical characteristics (t c =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drai n-source breakdown voltage bv dss v gs =0v i d =250 a 100 - - v zero gate voltage drain current i dss v ds =100v,v gs =0v - - 1 a gate -body leakage current i gss v gs =20v,v ds =0v - - 100 na on c haracteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 0.9 1.3 1.7 v drai n-source on-state resistance r ds(on) v gs =10v, i d =30a - 14 17 m drai n-source on-state resistance r ds(on) v gs =4.5v, i d =30a - 15 18 m forw ard transconductance g fs v ds =5v,i d =30a 20 - - s dyna mic characteristics (note4) inpu t capacitance c lss - 5320 - pf outp ut capacitance c oss - 950 - pf reve rse transfer capacitance c rss v ds =25v,v gs =0v, f=1.0mhz - 360 - pf swit ching characteristics (note 4) turn -on delay time t d(on) - 17 - ns turn -on rise time t r - 9 - ns turn -off delay time t d(off) - 48 - ns turn -off fall time t f v dd =50v,i d =2a,r l =1 v gs =10v,r gen =3 - 36 - ns tota l gate charge q g - 73 - nc gate -source charge q gs - 11 - nc gate -drain charge q gd v ds =50v,i d =30a, v gs =10v - 18 - nc drai n-source diode characteristics diod e forward voltage (note 3) v sd v gs =0v,i s =30a - - 1.2 v diod e forward current (note 2) i s - - 50 a reve rse recovery time t rr - 43 ns reve rse recovery charge qrr tj = 25c, if =30a di/dt = 100a/ s (note3) - 46 nc forw ard turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) note s: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production 5. e as con dition: tj=25 ,v dd =30v ,v g =10v ,l=0.5mh,rg=25 ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com revision:20170301 -p2
test circuit 1) e as tes t circuits 2) ga te charge test circuit 3) sw itch time test circuit ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com revision:20170301 -p3
typi cal electrical and thermal characteristics (curves) vds d rain-source voltage (v) figure 1 output characteristics vgs g ate-source voltage (v) figure 2 transfer characteristics i d - dr ain current (a) figure 3 rdson- drain current t j -junct ion temperature( ) figure 4 rdson-junctiontemperature qg g ate charge (nc) figure 5 gate charge vsd s ource-drain voltage (v) figure 6 source- drain diode forward rdso n on-resistance(m ) i d - dr ain current (a) i d - dr ain current (a) normalized on-resistance vgs gate-source voltage (v) i s - re verse drain current (a) ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com revision:20170301 -p4
v ds drain-source voltage (v) figure 7 capacitance vs vds vds d rain-source voltage (v) figure 8 safe operation area t j -junct ion temperature( ) figure 9 power de-rating i d - dr ain current (a) c capacitance (pf) squ a re wave pluse duration(sec) figure 10 normalized maximum transient thermal impedance r(t) ,normalized effective tran sient thermal impedance powe r dissipation (w) ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com revision:20170301 -p5
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